Biography
Dr. Bablu K. Ghosh
Dr. Bablu K. Ghosh
EEE Program, UMS, Malaysia
Title: TCO and carrier selective materials open circuit voltage and efficiency significance in solar photovoltaic cells
Abstract: 

Biography: 
Dr. Bablu K. Ghosh has received his Doctor of Engineering (DE) from Graduate School of Engineering, Fukui University, Japan in 2004 in the global engineering program for international students (GEPIS) under Monbusho Scholarship. Earlier he did his undergraduate and masters from Rajshahi university, Bangladesh in Applied Physics and electronic as major. Currently he is working in Electrical and Electronic Engineering Program in the Faculty of Engineering, University Malaysia Sabah. He has 14 years of industry and 12 years of academic experience. He is specialized in optoelectronics and optical interaction with materials for energy conversion. Before joining UMS, he was engaged as a Radio Engineer, Scientific Officer, BAEC and Microwave planning Engineer in a telecom company. He is Author of about fifty (50) Journals and conference papers. He also attended several conferences in the USA, Japan, China, Indonesia, and Malaysia. He also wrote a book on advanced materials technology for opto-electronics applications

Research Interest:
Efficiency progression is the main drive to reduce renewable energy (RE) cost over non-renewable energy. For massive implementation solar photovoltaic materials and solar cell diverse architecture band gap matching is highly essential to improve the energy conversion efficiency. PV photo-thermal loss in the field level is a key question of opto-electronic devices performance. In this case thermalization, radiative and non-radiative recombination loss lessening for best electrical performance is research core direction. Thermal associated loss lessening purpose modern MIS contact design by insulating stack and metal alike doped polySi or un-doped transition metal oxides (TMO) contacts design is current interest. Besides that advanced materials back surface field contact design for majority carrier selectivity of transparent barrier design. Carrier injection lessening and least cost up doped emitter designed by organic materials in Si for hybrid hetero junction solar cell is recent interest.