Biography
Prof. Jinshun Bi
Prof. Jinshun Bi
Institute of Microelectronics, Chinese Academy of Sciences (IMECAS), China
Title: Reliability Issues and Radiation Effects on Emerging Non-volatile Memories
Abstract: 
This talk will focus on the reliability issues of non-volatile memories under harsh environment, especially the Flash memory and resistive random access memory (RRAM). By electrostatic force microscopy (EFM) and in situ electron holography techniques, the charge trapping and loss properties of HfO2-based trapping structures were demonstrated. Additional, the cycling operation induced degradation mechanism was clarified by charge pumping analysis and a new junction-assisted programming scheme was proposed to improve it. Meanwhile, RRAM is an emerging NVM technology, its resistance switching is based on the formation/dissolution of nanoscale conductive filaments in oxide-electrolyte insulator for non-volatile memory. To improve the reliability of RRAM, we presented some effective ways to control the formation and dissolution process of conductive filaments by optimizing programming schemes and designing device structure. Furthermore, the radiation effects of Flash and RRAM, such as total ionizing dose, displacement damage and single event effects, have been evaluated in details. In terms of storage element, RRAM shows great advantage over Flash on anti-radiation performance. If transistors or peripheral circuits are taken into consideration, the situation becomes much complex. We will make a deep discussion in this talk.
Biography: 
Jinshun Bi received his B. S. degree in Microelectronics from Nankai University in 2003 and Ph.D. degree in Microelectronics from Chinese Academy of Sciences in 2008. Since 2008 he has worked in Institute of Microelectronics, Chinese Academy of Sciences (IMECAS). He has been a visiting scholar in Vanderbilt University in USA during May 2012 to August 2013 and in INSA de Lyon in France during August 2017 to November 2017.

He is currently a full professor. He is leading and joining more than 20 research programs. He has authored and co-authored more than 150 academic papers and 3 books while holding 41 granted patents. His research interests include radiation effects, reliability, nanoelectronics, emerging memory and bio-sensors.