| Biography | |
|---|---|
 Prof. Bablu K Ghosh University Malaysia Sabah, Malaysia |
|
| Title: Hybrid heterojunction for transparent photodevice applications | |
| Abstract: Functional materials are passionate about low-carbon energy systems development. Facile fabrication techniques of optoelectronic materials design with thin active and interface layer of greater optical absorption, emission and related carrier transport properties is commercially important. In this context SiGe materials have received a lot of interest due to their promising stability, band gap dependent performance variation for optoelectronics and related devices. To investigate the electrical performance of SiGe photo device spin coated organic PTAA p-materials contact is developed on sputtered Si0.8Ge0.2 and Si0.9Ge0.1 material on quartz and ITO/Glass substrates respectively. The results displayed that when the transmittance of SiGe thin film decreases, the micro strain of SiGe films are decreased. Both Si0.8Ge0.2 and Si0.9Ge0.1 films UV- near NIR band transparency >85% are revealed the deposited SiGe is a nano-crystalline phase with composition of SiOx. It is also revealed from band gap, XRD and EDS analysis. Ge composition though slightly makes variation of band gap that is related to SiOx variation of in SiGe. Nevertheless, relatively lower transmittance film greater current density is displayed. Higher rectifying ratio for relatively less transparent SiGe material deposited on ITO glass substrate is revealed under dark analysis. Overall, the PTAA/Si0.8Ge0.2 photo device smaller ideality factor, higher transparency and greater rectifying ratios are exposed. | |
| Biography: Dr. Bablu K. Ghosh received his Doctor of Engineering (DE) from Fukui University, Japan in Graduate School of Engineering in 2004 under Monbusho Scholarship. Currently he is working in Electrical and Electronic Engineering program under Faculty of Engineering in University Malaysia Sabah, Malaysia as senior lecturer. His research area is solar PV materials, photo detectors, nano and opto-electronics. For higher opto-electric gain Si device scaling and integration purpose hetero-junction (HJ) or hybrid HJ (HHJ) for photo device design is current interests of research. He is the author of sixty five peer reviewed journals and proceedings. He also attended several conferences in USA, Japan, China, Indonesia, Malaysia, France and UK for his work presentation as invited speaker. Before joining UMS, he has been working as a research engineer in Bangladesh technical service cadre for 10 years. Earlier he has also served in Bangladesh atomic energy commission as scientific officer and telecom Engineer in Bangladesh Rural Telecom Authority for 03 years. Based on his outstanding educational background, research accomplishments and professional reputation he has been nominated senior member of IEEE, membership of IET, and C.Eng from the UK. | |
