| Biography | |
|---|---|
 Prof. Yanfeng Jiang Jiangnan University, China |
|
| Title: A Novel Photodiode Array Structure with Double -layer SiO 2 Isolation | |
| Abstract: A novel photodiode array structure is proposed and implemented in the paper. Based on SOI substrate, the structure adopts double layers of SiO2 for isolation among PN junctions. Compared with the incumbent photodiode arrays with single isolation layer, the novel design exhibits suppressed leakage current, less noise, higher optical response sensitivity, and better compatible integration with other devices. The dark current of this structure is less than nanoamperes (10-9 A), with the benefits of 1000 times’ smaller leakage current than the other structures, and higher sensitivity with response speed less than 200 ns. The device is fabricated and characterized. The doping concentration and the structural profile are characterized. The fabricated device is packaged with photo LED and the MOS device to act as the MOS relay driver. The photodiode structure can be used to drive the MOS device. | |
